Abstract:Carbon nanotubes are regarded promising building blocks for the future nanoelectronics. High performance transistors and integrated circuits based on semiconducting CNT thin films, e.g., CMOS type 4-bit adder, CNT computer, flexible sensor etc., have been reported. These progresses demonstrate the CNT transistor technology is being pushed to practical application. For real circuits applications, high Ion/Ioff ratio with low Ioff for a transistor are required in high speed and low power consumption integrated circuits. However, the switching behavior of most reported CNT thin film transistors are not good enough. Due to the intrinsic ambipolarity of CNTs, the Ioff values are usually higher than hundreds of nano Ampe and the Ion/Ioff ratio is decreased to less than 102 at relatively high source/drain bias voltages (e.g. 1V). Though the switching behavior of the FETs based on individual CNTs can be improved by either special design of the device geometry or chemical doping, these methods do not work well in CNT thin film transistors. In this work, we improved the performance of CNT thin film transistors by combining the asymmetric gate design and chemical doping. In this way, the Ioff was suppressed while the Ion was increased at the mean time. Thus the Ion/Ioff ratio was increased by ~2 orders of magnitude when compared with normally designed top-gate device. Moreover, the devices showed better subthreshold swing (SS) and the threshold voltage (Vth) was closer to zero than normal devices. These improvements are benefit to more complicated circuits design, and our method is applicable for the emerging nanodevices.

Enhancement of Ambipolar Characteristics in Single-Walled Carbon Nanotubes Using C-60 and Fabrication of Logic Gates

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Nanotube and Nanowire Transistors

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Fully-Printed Flexible Dual-Gate Carbon Nanotube Thin-Film Transistors with Tunable Ambipolar Characteristics for Complementary Logic Circuits.

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Fabrication Of High Performance Top-Gate Complementary Inverter Using A Single Carbon Nanotube And Via A Simple Process

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

Almost Perfectly Symmetric Swcnt-Based Cmos Devices and Scaling

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties