Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Fabrication Of High Performance Top-Gate Complementary Inverter Using A Single Carbon Nanotube And Via A Simple Process

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Carbon Nanotube Complementary Logic with Low-Temperature Processed End-Bonded Metal Contacts

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-performance Nanowire Complementary Metal-Semiconductor Inverters

Nanotube and Nanowire Transistors

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor