Abstract:Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V-out) versus input (V-in) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximate to 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

High-performance Nanowire Complementary Metal-Semiconductor Inverters

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

High-Performance Logic Circuits Constructed On Single Cds Nanowires

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

Single-Nanowire Cmos Inverter Based on Ambipolar Si Nanowire Fets

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

Device Design for Gate-All-Around-Nanowire Tunneling CMOS-FETs of Axial Ge–Si Heterojunction Through Inverter Performance Evaluation

Ultrahigh-performance inverters based on CdS nanobelts.

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

Logic Gates Constructed on CdS Nanobelt Field-Effect Transistors with High-Κ HfO2 Top-Gate Dielectrics

Fabrication Of High Performance Top-Gate Complementary Inverter Using A Single Carbon Nanotube And Via A Simple Process

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Electronics and Photonics Prototype Devices Based on Compound Semiconductor Nanowires/nanobelts

Vertically Integrated, Three-Dimensional Nanowire Complementary Metal-Oxide-Semiconductor Circuits

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Enhancement-Mode Metal-Semiconductor Field-Effect Transistors Based on Single N-Cds Nanowires

Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime

Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs with AlN/SiN Bilayer Dielectric

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)