Abstract:Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 10^8 and 10^6, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. For the first time, we demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and polarity gate behavior is conducted, which has previously been lacking. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices are qualitatively analyzed. This work lays the foundation for future developments in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed and more flexible logic circuits.

Logic Gates Constructed on CdS Nanobelt Field-Effect Transistors with High-Κ HfO2 Top-Gate Dielectrics

High-Performance Logic Circuits Constructed On Single Cds Nanowires

Ultrahigh-performance inverters based on CdS nanobelts.

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

High-performance Nanowire Complementary Metal-Semiconductor Inverters

High-Performance Cds Nanobelt Field-Effect Transistors With High-Kappa Hfo2 Top-Gate Dielectrics

Si-Nanowire Cmos Inverter Logic Fabricated Using Gate-All-Around (gaa) Devices and Top-Down Approach

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

High Performance Zno Nanorod Strain Driving Transistor Based Complementary Metal-Oxide-Semiconductor Logic Gates

High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power Via Configurable MoS2/WSe2 Gate

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Monolithic DFF-NAND and DFF-NOR Logic Circuits Based on GaN MIS-HEMT

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

Inverter and Universal Gates Implementation Using Novel Core Insulator Double Gate (CIDG) MOSFETs

Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric