Abstract:A back-gated negative-capacitance FET (NCFET) inverter is fabricated by using the new type of ferroelectric hafnium zirconium aluminum oxide (HZAO) as gate-stack and ambipolar tungsten selenide (WSe2) as a channel material. As a contact engineering of source/drain (S/D) electrodes, different metal electrodes are investigated to fabricate p- and n-type NCFETs, respectively. The measurements of electrical properties show that the most suitable S/D electrode metals are Pt for p-NCFET and Ti for n-NCFET. The WSe2 p- or n-NCFETs prepared using the ferroelectric HZAO thin film combined with Pt or Ti as S/D electrodes exhibit excellent electrical performance: subthreshold swing (SS) of p- or n-NCFET is 20–25 mV/dec or 25–30 mV/dec over three orders of drain current magnitude and on/off current ratio is (2.0–4.6) or (1.1–2.6) . Moreover, the inverter composed of n-NCFET and p-NCFET exhibits a quite high-voltage gain with a maximum gain over 50 at an operating voltage of 5 V. The main mechanisms are attributed to a faster switching speed of NCFETs than conventional FETs and the ambipolar conduction characteristic of WSe2 when contacting with different work-function metals. Because of the WSe2's ambipolar behavior, the process of fabricating inverter becomes much simpler than other 2-D materials.

Ultrahigh-performance inverters based on CdS nanobelts.

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

Logic Gates Constructed on CdS Nanobelt Field-Effect Transistors with High-Κ HfO2 Top-Gate Dielectrics

An Ultra-low-power Gain-boost Class-C Inverter and Its Application

High DC Gain and Wide Output Swing Class-C Inverter

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

High-Gain Transparent Inverters Based on Deuterated ZnO TFTs Fabricated by Atomic Layer Deposition

High-Efficiency High-Density Critical Mode Rectifier/Inverter for WBG-Device-Based On-Board Charger

High-performance Nanowire Complementary Metal-Semiconductor Inverters

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

How to Build Good Inverters from Nanomaterial-Based Transistors

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-performance Inverters Based on Ambipolar Organic-Inorganic Heterojunction Thin-Film Transistors

High-Performance Cds Nanobelt Field-Effect Transistors With High-Kappa Hfo2 Top-Gate Dielectrics

MHz Level Two-Stage ZVS DC-DC Converter with Wide Input and Output Voltage Ranges

CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

High-Performance Logic Circuits Constructed On Single Cds Nanowires

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application

Low-power-consumption CMOS Inverter Array Based on CVD-grown P-Mote2 and N-Mos2

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric