Abstract:<p>Self‐assembled monolayers (SAMs) of π‐conjugated molecules can achieve robust charge transport by the formation of ordered 2D layers at the desired regions, which enable their application for organic integrated circuits. Here, the self‐assembled monolayer field‐effect transistor concept is applied as a scalable method to realize fully integrated complementary inverters by stepwise semiconductor deposition. Two‐component stacked bilayer ambipolar transistors are fabricated by semiconducting self‐assembled monolayers (n‐SAM or p‐SAM) as the bottom layer and a complementary thin‐film semiconductor layer on top. The integrated complementary metal‐oxide‐semiconductor like (CMOS‐like) inverter achieves proper logic performances. The nanometer‐thin monolayers exhibit effective charge transport and their flat, homogeneous surfaces benefit the interconnected growth of the top layer. Furthermore, by controlling the solution‐based and region‐selective deposition of p‐ and n‐type SAMs, fully integrated CMOS inverters are realized on wafer scale by photolithography for the first time. The CMOS inverters show a nearly 100% yield with a gain up to 48, and noise margin 3.68 V (73.6% of V<sub>DD</sub>/2). The strategy of semiconducting SAMs for digital logic gates demonstrates a reliable approach for sophisticated large‐area circuits.</p>

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

High-performance Nanowire Complementary Metal-Semiconductor Inverters

Ultrahigh-performance inverters based on CdS nanobelts.

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

Single-Nanowire Cmos Inverter Based on Ambipolar Si Nanowire Fets

High-Performance Logic Circuits Constructed On Single Cds Nanowires

Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

Logic Gates Constructed on CdS Nanobelt Field-Effect Transistors with High-Κ HfO2 Top-Gate Dielectrics

Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime

How to Build Good Inverters from Nanomaterial-Based Transistors

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Improved current saturation and shifted switching threshold voltage in In2O3 nanowire based, fully transparent NMOS inverters via femtosecond laser annealing

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Low-power-consumption CMOS Inverter Array Based on CVD-grown P-Mote2 and N-Mos2

Device Design for Gate-All-Around-Nanowire Tunneling CMOS-FETs of Axial Ge–Si Heterojunction Through Inverter Performance Evaluation

Study of A Single Coaxial Silicon Nanowire for On-Chip Integrated Photovoltaic Application

High-Gain Transparent Inverters Based on Deuterated ZnO TFTs Fabricated by Atomic Layer Deposition

High-performance Inverters Based on Ambipolar Organic-Inorganic Heterojunction Thin-Film Transistors