Abstract:Large‐scale MoTe2 n‐type field‐effect transistor (FET) arrays with coplanar metallic 1T′‐WTe2 contacts are successfully fabricated, showing typical n‐type characteristics. Furthermore, large‐scale homogeneous complementary metal‐oxide‐semiconductor (CMOS) inverter arrays are fabricated, showing clear logic swing with low power consumption and high device yield (≈92%). The fabrication method is free from the transfer process and both the n‐FETs and CMOS inverters show high uniformity and reliability. 2D MoTe2 is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical‐vapor‐deposition‐grown MoTe2 usually presents p‐type characteristics. In order to realize basic electronic units like complementary metal‐oxide‐semiconductor (CMOS) inverter, controllable fabrication of p‐ and n‐type transistors at large scale is of vital importance. Here, large‐scale MoTe2 n‐channel field‐effect transistor (n‐FET) arrays are successfully fabricated with seamless coplanar metallic 1T′‐WTe2 contacts to reduce contact resistance. High‐k HfO2 serves as a gate dielectric and its atomic‐layer‐deposition (ALD) process causes an n‐doping effect on the 2H‐MoTe2 channel. The FETs perform typical n‐type characteristics with average electron density and on/off ratio of ≈1.7 × 1013 cm−2 and 2.1 × 104, respectively. Furthermore, large‐scale homogeneous CMOS inverter arrays are fabricated, showing clear logic swing with low power consumption (≈0.4 nW) and high device yield (≈92%). Notably, their voltage transfer characteristics exhibit small hysteresis, and they work well after being kept in air for 16 months, indicating high device stability. The statistical results show that both the n‐FETs and CMOS inverters have high uniformity and reliability in performance. Significantly, this fabrication method is free from transfer processes and compatible with traditional silicon technology. This work paves the way for the application of few‐layer MoTe2 in semiconductor nanoelectronics integration.

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

High-performance Nanowire Complementary Metal-Semiconductor Inverters

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

High-Performance MoS 2 Complementary Inverter Prepared by Oxygen Plasma Doping

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (adv. Electron. Mater. 10/2022)

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Almost Perfectly Symmetric Swcnt-Based Cmos Devices and Scaling

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-performance Inverters Based on Ambipolar Organic-Inorganic Heterojunction Thin-Film Transistors