Abstract:Large‐scale MoTe2 n‐type field‐effect transistor (FET) arrays with coplanar metallic 1T′‐WTe2 contacts are successfully fabricated, showing typical n‐type characteristics. Furthermore, large‐scale homogeneous complementary metal‐oxide‐semiconductor (CMOS) inverter arrays are fabricated, showing clear logic swing with low power consumption and high device yield (≈92%). The fabrication method is free from the transfer process and both the n‐FETs and CMOS inverters show high uniformity and reliability. 2D MoTe2 is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical‐vapor‐deposition‐grown MoTe2 usually presents p‐type characteristics. In order to realize basic electronic units like complementary metal‐oxide‐semiconductor (CMOS) inverter, controllable fabrication of p‐ and n‐type transistors at large scale is of vital importance. Here, large‐scale MoTe2 n‐channel field‐effect transistor (n‐FET) arrays are successfully fabricated with seamless coplanar metallic 1T′‐WTe2 contacts to reduce contact resistance. High‐k HfO2 serves as a gate dielectric and its atomic‐layer‐deposition (ALD) process causes an n‐doping effect on the 2H‐MoTe2 channel. The FETs perform typical n‐type characteristics with average electron density and on/off ratio of ≈1.7 × 1013 cm−2 and 2.1 × 104, respectively. Furthermore, large‐scale homogeneous CMOS inverter arrays are fabricated, showing clear logic swing with low power consumption (≈0.4 nW) and high device yield (≈92%). Notably, their voltage transfer characteristics exhibit small hysteresis, and they work well after being kept in air for 16 months, indicating high device stability. The statistical results show that both the n‐FETs and CMOS inverters have high uniformity and reliability in performance. Significantly, this fabrication method is free from transfer processes and compatible with traditional silicon technology. This work paves the way for the application of few‐layer MoTe2 in semiconductor nanoelectronics integration.

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

Homogeneous 2D MoTe2 CMOS Inverters and P-N Junctions Formed by Laser-Irradiation-Induced P-Type Doping.

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

High-Performance MoS 2 Complementary Inverter Prepared by Oxygen Plasma Doping

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1- x Nanosheets for p-Type Transistors and Inverters

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe 2 Transistors

Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application