Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Homogeneous 2D MoTe2 CMOS Inverters and P-N Junctions Formed by Laser-Irradiation-Induced P-Type Doping.

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

Selective Conversion from P-Type to N-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.

Reconfigurable MoTe2 Field-Effect Transistors and Its Application in Compact CMOS Circuits

Facile P-Doping of Few-Layer MoTe2 by Controllable Surface Oxidation Toward High-Performance Complementary Devices

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

P-type polar transition of chemically doped multilayer MoS2 transistor

Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

High-Performance MoS 2 Complementary Inverter Prepared by Oxygen Plasma Doping

Contact Engineering High Performance n-Type MoTe2 Transistors

Low-temperature Electrical Characterization of P- and N-Type MoTe2 Transistors

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Contact Engineering High-Performance n-Type MoTe2 Transistors

Nonvolatile and Programmable Photodoping in MoTe 2 for Photoresist-Free Complementary Electronic Devices.