Abstract:Molybdenum ditelluride (MoTe2) has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-kappa screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-kappa dielectric and systematically investigated the electronic and optoelectronic properties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm(2) V-1 s(-1), compared to 0.2-20 cm(2) V-1 s(-1) ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2x10(13) cm(-2) is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capability, leading to a high on-state hole current of 6.1 mu A mu m-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future. (C) 2018 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.

Low-temperature Electrical Characterization of P- and N-Type MoTe2 Transistors

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Analysis of Low-Frequency 1/f Noise Characteristics for MoTe2 Ambipolar Field-Effect Transistors

Low Temperature Carrier Transport Study of Monolayer MoS2 Field Effect Transistors Prepared by Chemical Vapor Deposition under an Atmospheric Pressure

Contact Engineering High Performance n-Type MoTe2 Transistors

Contact Engineering High-Performance n-Type MoTe2 Transistors

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Dependence of channel thickness on MoTe2 transistor performance with Pt contact on a HfO2 dielectric

High band degeneracy and weak chemical bonds leading to enhanced thermoelectric transport properties in 2H–MoTe2

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Thickness-dependent Carrier Polarity of MoTe2 Transistors with NiTe2 Semimetal Contacts

MoTe2 P–n Homojunctions Defined by Ferroelectric Polarization

Enhanced Photoresponsivity and Hole Mobility of MoTe2 Phototransistors by Using an Al2O3 High-Κ Gate Dielectric

Carrier Modulation of Ambipolar Few‐Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Precisely Controllable N-Type Doping in MoTe2 Field Effect Transistors by Hydrazine Treatment

Uniaxial Negative Thermal Expansion and Band Renormalization in Monolayer Td−MoTe2 at Low Temperature

High temperature Raman investigation of few-layer MoTe2

Facile P-Doping of Few-Layer MoTe2 by Controllable Surface Oxidation Toward High-Performance Complementary Devices

Investigation on the Phase-Transition-induced Hysteresis in the Thermal Transport along the C-Axis of MoTe2

The Electrical Performances of Monolayer MoS2-based Transistors under Ultra- Low Temperature