D. Rhodes,D. A. Chenet,B. E. Janicek,C. Nyby,Y. Lin,W. Jin,D. Edelberg,E. Mannebach,N. Finney,A. Antony,T. Schiros,T. Klarr,A. Mazzoni,M. Chin,Y. -c Chiu,W. Zheng,Q. R. Zhang,F. Ernst,J. I. Dadayp,X. Tong,J. Ma,R. Lou,S. Wan,T. Qian,H. Ding,R. M. Osgood,D. W. Paley,A. M. Lindenberg,P. Y. Huang,A. N. Pasupathy,M. Dubey,J. Hone,L. Balicas

Abstract:MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1-xWxTe2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to xc might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.

Investigation on the Phase-Transition-induced Hysteresis in the Thermal Transport along the C-Axis of MoTe2

Composition Dependent Phase Transition and Its Induced Hysteretic Effect in the Thermal Conductivity of Wxmo1-Xte2

A Thermal Conductivity Switch Via the Reversible 2H-1T Phase Transition in Monolayer MoTe2

Phase-transition-induced thermal hysteresis in Type-II weyl semimetals M o T e 2 and M o 1 − x W x T e 2

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Ultrafast and Stable Phase Transition Realized in MoTe2-based Memristive Devices.

Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory

Four-phonon Scattering and Thermal Transport in 2H–mote2

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Photocarrier Dynamics in MoTe<sub>2</sub> Nanofilms with 2<i>H</i> and Distorted 1<i>T</i> Lattice Structures

First-principles Study on Phonon Transport Properties of MoTe2 and WTe2 Monolayers in Different Phases

Composition and Temperature-Dependent Phase Transition in Miscible Mo1−xWxTe2 Single Crystals

Optical Control of Multistage Phase Transition via Phonon Coupling in MoTe 2

Topological phase transition between distinctWeyl semimetal states in MoTe2

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Unraveling Thermal Transport Properties of MoTe2 Thin Films Using the Optothermal Raman Technique

Phonon properties and low thermal conductivity of phase change material with superlattice-like structure

Effects Of Structural Phase Transition On Thermoelectric Performance in Lithium-Intercalated Molybdenum Disulfide (Li x MoS 2 ).

Hysteretic Electronic Phase Transitions in Correlated Charge Density Wave State of 1T-Tas2

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution