Ultrafast and stable phase transition realized in MoTe 2 -based memristive devices

Hui-Kai He,Yong-Bo Jiang,Jun Yu,Zi-Yan Yang,Chao-Fan Li,Ting-Ze Wang,De-Quan Dong,Fu-Wei Zhuge,Ming Xu,Zhi-Yi Hu,Rui Yang,Xiang-Shui Miao
DOI: https://doi.org/10.1039/d1mh01772a
IF: 13.3
2022-01-01
Materials Horizons
Abstract:An electric-field induced phase transition between semiconducting 2H and metallic 1T′ phases in a MoTe 2 device is demonstrated for the first time. The phase transition exhibits faster switching compared with phase-change random-access memory (PCRAM), and shows more controllable switching than conventional memristive devices.
materials science, multidisciplinary,chemistry
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