Abstract:The latest synthesized monolayer (ML) MoSi2N4 material exhibits stability in ambient conditions, suitable bandgap, and high mobilities. Its potential as a next-generation transistor channel material has been demonstrated through quantum transport simulations. However, in practical two-dimensional (2D) material transistors, the electrical contacts formed by the channel and the electrode must be optimized, as they are crucial for determining the efficiency of carrier injection. We employed the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method to systematically explore the vertical and horizontal interfaces between the typical metal electrodes and the ML MoSi2N4. The DFT+NEGF method incorporates the coupling between the electrode and the channel, which is crucial for quantum transport. Among these metals, Sc and Ti form n-type Ohmic contacts with zero tunneling barriers at both vertical and horizontal interfaces with ML MoSi2N4, making them optimal for contact metals. In-ML MoSi2N4 contacts display zero Schottky barriers but a 3.11 eV tunneling barrier. Cu and Au establish n-type Schottky contacts, while Pt forms a p-type contact. The Fermi pinning factors of the metal-ML MoSi2N4 contacts for both electrons and holes are above 0.51, much higher than the typical 2D semiconductors. Moreover, there is a strong positive correlation between the Fermi pinning factor and the band gap, with a Spearman rank correlation coefficient of 0.897 and a p-value below 0.001. Our work provides insight into the contact optimization for the ML MoSi2N4 transistors and highlights the promising potential of ML MoSi2N4 as the channel material for the next-generation FETs.

Thickness-dependent Carrier Polarity of MoTe2 Transistors with NiTe2 Semimetal Contacts

Dependence of channel thickness on MoTe2 transistor performance with Pt contact on a HfO2 dielectric

Carrier Modulation of Ambipolar Few‐Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping

Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Low-temperature Electrical Characterization of P- and N-Type MoTe2 Transistors

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

Contact Engineering High-Performance n-Type MoTe2 Transistors

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Contact Engineering High Performance n-Type MoTe2 Transistors

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Electrical Contacts in Monolayer MoSi2N4 Transistors

Assessing the role of quantum effects in 2D heterophase MoTe$_2$ field effect transistors

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides Through Substitutional Vanadium Doping