Abstract:The outstanding physical and electrical properties of transition metal dichalcogenides (TMDs) as semiconductor materials demonstrate a promising platform for future electronic devices. Among all the TMDs, MoTe 2 , in which the bandgap is close to that of the silicon (Si), is a more favorable candidate than others to be applied in next-generation integrated circuits (ICs). However, the conventional physical or chemical doping method is complicated for fabricating the MoTe 2 logic ICs. The transistors with additional polarity gates (PGs) are defined as polarity-controllable transistors (PCTs). The PG can dynamically control the type of charge carriers (n- or p-type) in the source/drain by electrostatic doping without the need of any physical or chemical doping, and thus reconfigure the transistor between n-type and p-type. In our work, the ambipolar conduction property in MoTe 2 enables the fabrication of high-quality polarity-controllable MoTe 2 transistors (PCMTs) that are promising as building blocks to construct the MoTe 2 logic ICs. The on/off ratios of the PCMTs are above 10 7 for both n-type and p-type. The highest field-effect mobility μ of p- and n-type MoTe 2 transistors are 38 and 42, respectively. The inverter (INV) based on the PCMTs has achieved a high gain of 37. Furthermore, the logic-gate cell library, which includes INV, negative- AND (NAND), negative- OR (NOR), exclusive- OR (XOR), and maJority (MAJ) is demonstrated using PCMTs. The above-mentioned desirable properties make PCMTs promising for future applications in 2-D-semiconductor-material-based logic ICs.

Nonvolatile and Programmable Photodoping in MoTe 2 for Photoresist-Free Complementary Electronic Devices.

Photodoping: Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist‐Free Complementary Electronic Devices (Adv. Mater. 52/2018)

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure Toward a Self-Driven Photodetector and Complementary Logic Circuits.

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Homogeneous 2D MoTe2 CMOS Inverters and P-N Junctions Formed by Laser-Irradiation-Induced P-Type Doping.

MoTe2 P–n Homojunctions Defined by Ferroelectric Polarization

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

Facile P-Doping of Few-Layer MoTe2 by Controllable Surface Oxidation Toward High-Performance Complementary Devices

Reconfigurable MoTe2 Field-Effect Transistors and Its Application in Compact CMOS Circuits

Enhanced Current Rectification and Self-Powered Photoresponse in Multilayer P-Mote2/n-mos2 Van Der Waals Heterojunctions.

Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van Der Waals Heterojunctions

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe 2 Van der Waals Heterojunctions

Broad-Band Photodetector Based on a Lateral MoTe2 1T-2H-1T Homojunction

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Dielectric engineering enable to lateral anti-ambipolar MoTe 2 heterojunction

Fabricating In-Plane MoTe2 P-N Homojunction Photodetector Using Laser-Induced P-Type Doping

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors

Controllable Carrier Concentration of Two-Dimensional TMDs by Forming Transition-Metal Suboxide Layer for Photoelectric Devices