Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe 2 Van der Waals Heterojunctions

Dongyang Zhao,Yan Chen,Wei Jiang,Xudong Wang,Jingjing Liu,Xinning Huang,Sancan Han,Tie Lin,Hong Shen,Xianying Wang,Weida Hu,Xiangjian Meng,Junhao Chu,Jianlu Wang
DOI: https://doi.org/10.1002/aelm.202001066
IF: 6.2
2021-03-30
Advanced Electronic Materials
Abstract:<p>The dangling‐bond‐free surfaces of 2D materials enable them to possess various degrees of freedom to form heterostructures with non‐2D materials. This allows for the combination of the advantages of different dimensional materials to fabricate van der Waals (vdW) heterostructures, thereby improving device performance and even bringing diversity and novelty. Herein, a mixed‐dimensional vdW heterostructure photodiode comprising a 1D tellurium (Te) nanowire and a 2D molybdenum ditelluride (MoTe<sub>2</sub>) flake is demonstrated. Forward rectifying and backward rectifying characteristics are realized by applying different gate voltage. The device displays a broad spectral response from visible to near‐infrared and exhibits ultrahigh external quantum efficiency of 7.16 × 10<sup>3</sup>% for photogating effect. Moreover, the response time can be improved by controlling gate voltage and a rapid response time of 4.8 ms is achieved. These mixed‐dimensional vdW heterojunctions, which take advantages of both 1D and 2D semiconductors, will facilitate the development of next‐generation electronics and optoelectronics.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to develop a highly tunable photodiode based on a hybrid - dimensional van der Waals heterojunction (i.e., a heterojunction composed of one - dimensional tellurium (Te) nanowires and two - dimensional molybdenum ditelluride (MoTe\(_2\)) flakes). Specifically, the researchers aim to achieve the tunability of charge transport from forward rectification to reverse rectification by taking advantage of the ambipolar transport characteristics of MoTe\(_2\). In addition, they also hope to achieve high responsivity, ultra - high external quantum efficiency (EQE), and fast response time through this design, thus providing new possibilities for the development of next - generation electronic and optoelectronic devices. The main findings in the paper include: - The device exhibits obvious rectification inversion characteristics under different gate voltages. - Under visible - light irradiation, the device shows high responsivity and ultra - high external quantum efficiency (EQE). In particular, at a wavelength of 520 nm, the EQE reaches 7.16 × 10\(^3\)%. - The response time of the device is very fast. By controlling the gate voltage, a fast response time of 4.8 ms can be achieved, which is much faster than most of the reported hybrid - dimensional photodetectors. These results indicate that the hybrid - dimensional van der Waals heterojunction can not only achieve high - performance photodetection functions, but also its unique structural design provides new design ideas and technical approaches for future electronic and optoelectronic devices.