Fabricating In-Plane MoTe2 P-N Homojunction Photodetector Using Laser-Induced P-Type Doping

Jing Chen,Junqiang Zhu,Ping Li,Xiao-Ming Wu,Ran Liu,Jing Wan,Tian-Ling Ren

DOI: https://doi.org/10.1109/ted.2021.3099082

2021-01-01

Abstract:The p-n homojunction devices based on 2-D-layered materials (2DLMs) with unusual physical characteristics are gaining extensive research on their use in photodetectors. However, the current fabrication of p-n homojunction devices based on 2DLMs needs a complex doping method. In our work, the laser-irradiation method is a simple and straightforward selective p-type doping technique for the 2-D semiconductor molybdenum ditelluride (MoTe 2 ). The laser-oxidized product MoO x is responsible for p-type doping in MoTe 2 . The laser-irradiation technique has been used to directly write an in-plane MoTe 2 p-n homojunction device, where the laser-scanned region is p-doped and the neighboring region is electrically n-doped by applying a positive back-gate voltage. The MoTe 2 p-n homojunction device has been used as a photodetector, which shows a high photoswitching ratio of 10 5 under the illumination of 633 nm at 6.5 μW and a short photoresponse time of 232 μs. The selective p-doped technique using a laser-irradiation method can be used in future logic circuits based on 2-D materials.