MoTe 2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

Chen Li,Ruijuan Tian,Ruixuan Yi,Siqi Hu,Yuxin Chen,Qingchen Yuan,Xutao Zhang,Yan Liu,Yue Hao,Xuetao Gan,Jianlin Zhao

DOI: https://doi.org/10.1021/acsphotonics.1c00628

IF: 7

2021-06-16

ACS Photonics

Abstract:We demonstrate a straightforward construction of MoTe₂ PN homojunction on a silicon photonic crystal cavity, which promises the realizations of cavity-enhanced optoelectronic devices integrated on silicon photonic chips. The employed silicon photonic crystal cavity has an air-slot in the middle to split it into two parts, which directly function as two individual back-gate electrodes of the top-coated few-layer MoTe₂. Beneficial from MoTe₂'s ambipolar property, reconfigured (PN, NN, PP, NP) homojunctions are realized by controlling the gate voltages of the two separated silicon electrodes. For instance, on/off ratios exceeding 10⁴ are obtained from the PN or NP homojunctions, and the ideality factors could approach 1.00. On the other hand, the silicon photonic crystal cavity could enhance light absorption in the coated MoTe₂, promising high-performance photodetection. By coupling the resonant mode with the MoTe₂ PN junction, a high photoresponsivity of 156 mA/W is obtained at the wavelength of 1353.7 nm, though it is the limit of MoTe₂'s absorption bandedge. As attributes of the PN junction, the photodetector has a dark current as low as 0.14 nA and a response bandwidth exceeding 1.1 GHz. The proposed device geometry has advantages of employing silicon photonic crystal cavity as the back gates of MoTe₂ PN junction directly and simultaneously to enhance light–MoTe₂ interactions, which might open a new avenue to construct MoTe₂-based laser diodes and electro-optic modulators on silicon photonic chips.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.1c00628?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.1c00628</a>.Design and characterizations of the silicon PC cavity; atomic force microscopy (AFM) images of employed 2D materials in the main text; mode coupling between MoTe₂ and PC cavity resonant mode; electrical and optoelectrical properties of device 2; electrical and optoelectrical properties of device 3; schematics of the experiment systems; photoresponses of the device in the main text; estimation of the electrical bandwidth of the MoTe₂ PN junction; performance comparisons with other 2D material PN homojunctions and MoTe₂-based photodetectors (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.1c00628/suppl_file/ph1c00628_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology