Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

Low-power-consumption CMOS Inverter Array Based on CVD-grown P-Mote2 and N-Mos2

High-Performance MoS 2 Complementary Inverter Prepared by Oxygen Plasma Doping

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

Low power flexible monolayer MoS2 integrated circuits

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

Homogeneous 2D MoTe2 CMOS Inverters and P-N Junctions Formed by Laser-Irradiation-Induced P-Type Doping.

Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications