Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Single-Nanowire Cmos Inverter Based on Ambipolar Si Nanowire Fets

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

High-performance Nanowire Complementary Metal-Semiconductor Inverters

High-Performance Logic Circuits Constructed On Single Cds Nanowires

A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric

Device Design for Gate-All-Around-Nanowire Tunneling CMOS-FETs of Axial Ge–Si Heterojunction Through Inverter Performance Evaluation

Study of A Single Coaxial Silicon Nanowire for On-Chip Integrated Photovoltaic Application

Si Nanowire - Array Source Gated Transistors

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Channel-bias-controlled Reconfigurable Silicon Nanowire Transistors Via an Asymmetric Electrode Contact Strategy

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Almost Perfectly Symmetric Swcnt-Based Cmos Devices and Scaling

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

Improved current saturation and shifted switching threshold voltage in In2O3 nanowire based, fully transparent NMOS inverters via femtosecond laser annealing

High Gain Pseudo-Inverter Based on Silicon-on-Insulator with Ambipolar Transport

Logic Gates Constructed on CdS Nanobelt Field-Effect Transistors with High-Κ HfO2 Top-Gate Dielectrics