Abstract:The switching of conventional field-effect transistors (FETs) is limited by the Boltzmann barrier of thermionic emission, which prevents the realization of low-power electronics. In order to overcome this limitation, among others, unconventional device geometry with a ferroelectric/dielectric insulator stack has been proposed to demonstrate stable negative-capacitance behavior. Here, the switching of the ferroelectric layer behaves like a step-up amplifier and results in a body factor less than 1. This implies a larger change in the semiconductor surface potential compared to the applied gate voltage variation. The transistors with such ferroelectric/dielectric stack are known as negative-capacitance field-effect transistors (nc-FETs), and can demonstrate a subthreshold slope lower than the Boltzmann's limit (60 mV/decade). While nc-FETs have typically been realized with high-vacuum-deposition processes, here we show fully printed nc-FETs with amorphous indium-gallium-zinc oxide (a-IGZO) as the semiconductor material, Al2O3 as the dielectric, and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the polymer ferroelectric. The printed nc-FETs demonstrate an extremely low subthreshold slope of ∼2.3 mV/decade at room temperature, which remains below the Boltzmann's limit for over 5 orders of magnitude of drain currents. Furthermore, the unipolar depletion-load-type inverters fabricated using n-type nc-FETs have demonstrated an extraordinary signal gain of 2691.

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor

Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain

Single-Nanowire Cmos Inverter Based on Ambipolar Si Nanowire Fets

Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Device Design for Gate-All-Around-Nanowire Tunneling CMOS-FETs of Axial Ge–Si Heterojunction Through Inverter Performance Evaluation