Abstract:Boltzmann distribution thermal tails of carriers restrain the subthreshold swing (SS) of field-effect transistors (FETs) to be lower than 60 mV/decade at room temperature, which restrains the reduction of operate-voltage and power consumption of transistors. The negative-capacitance FET (NC FET) is expected to break through this physical limit and obtain a steep SS by amplifying the gate voltage through the negative capacitance effect of the ferroelectric thin film, providing a new way to further reduce the power consumption of the transistor at the end of Moore's law. Here, we show a MoS2 NC FET with a CuInP2S6 ferroelectric, exhibiting a large on/off ratio of 108, a steep SS as low as 6 mV/decade, and a wide sub-60 mV/decade drain current range of more than 4 orders of magnitude while sacrificially inducing a huge hysteresis larger than 500 mV. Furthermore, we found that by inserting the h-phase boron nitride (h-BN) layer with suitable thickness, the dielectric capacitance matches the ferroelectric negative capacitance better, and thus the hysteresis on the transfer curve is reduced, and the ideal switching-behavior transistors with SS as low as 62 mV/decade and only 5 mV negligible hysteresis were obtained. Our work demonstrates that under the capacitance-matching condition, the hysteresis-free negative-capacitance transistors do not act as the predicted steep-slope transistors, but their voltage-saving still occurs instead as a type of effective transconductance booster with more than 20 times transconductance amplification.

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Van der Waals negative capacitance transistors

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact

Antiferroelectric Negative Capacitance Transistor for Low Power Consumption

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

Negative Capacitance Oxide Thin-Film Transistor with Sub-60 Mv/decade Subthreshold Swing