Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Steep Slope P-Type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Van der Waals negative capacitance transistors

Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

A Novel Negative Capacitance Tunnel FET with Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Ferroelectric Negative Capacitance Field Effect Transistor