Abstract:In this work, the gate controllability of WSe2 channel with varying thickness from monolayer to ten‐layer is investigated, by fabricating van der Waals contacted WSe2 devices. The findings demonstrate negligible hysteresis and excellent subthreshold swing observed when utilizing WSe2 channel thicknesses ≥ five‐layer. However, by reducing the WSe2 channel thickness below the trilayer, the subthreshold swing deviates from the thermal limit. The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre‐patterned van der Waals (vdW)‐contacted p‐FETs, varying the WSe2 channel thickness from monolayer to ten‐layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing Dit. The findings demonstrate negligible hysteresis and excellent subthreshold swing (SSmin) close to the thermal limit (≈60 mV dec−1), with a corresponding Dit of ≈1010 cm−2 eV−1, comparable to Dit values observed in state‐of‐the‐art Si transistors, when utilizing WSe2 channel thicknesses ≥ five‐layer. However, reducing the WSe2 channel thickness below the trilayer, SSmin (≈91 mV dec−1) deviates from the thermal limit, attributed to a comparatively higher Dit (≈1011 cm−2 eV−1), despite the still lower than values reported for surface‐contacted 2D transistors. Furthermore, all devices exhibit consistent p‐type characteristics, featuring a high ION/IOFF ratio, high mobility, and excellent electrical stability confirmed over several months.

Steep Slope P-Type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Steep-Slope Negative Quantum Capacitance Field-Effect Transistor

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Steep-slope hysteresis-free negative capacitance MoS2 transistors

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS 2 /WSe 2 van der Waals Heterostructures

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Flexible p-Type WSe2 Transistors with Alumina Top-Gate Dielectric

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

Low Resistance Contact to P-Type Monolayer WSe2