An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Adeel Liaqat,Yiheng Yin,Sabir Hussain,Wen Wen,Juanxia Wu,Yuzheng Guo,Chunhe Dang,Ching-Hwa Ho,Zheng Liu,Peng Yu,Zhihai Cheng,Liming Xie
DOI: https://doi.org/10.1088/1361-6528/ac4063
IF: 3.5
2021-12-24
Nanotechnology
Abstract:Abstract As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called ‘Boltzmann tyranny’) implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec −1 at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP 2 S 6 /MoS 2 . The negative capacitance from the ferroelectric CuInP 2 S 6 has enabled the breaking of the ‘Boltzmann tyranny’. The heterostructure based device has shown steep slopes switching below 60 mV dec −1 (lowest to < 10 mV dec −1 ) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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