Abstract:Most of the CMOS field-effect transistors (FETs) are in enhancement mode, absence of charge carriers in the channel at zero gate voltage, to reduce power consumption. In principle, depletion mode transistors have higher currents than the enhancement mode due to ample charge carrier density. For high-frequency applications, the off-state of FET is not a mandatory requirement. Rather the presence of a channel at zero gate bias and sufficiently large saturation mobility is advantageous. Here, we demonstrate that by selecting a particular work function for a gate metal, threshold voltages of the FETs can be changed from negative to positive values that is selective switching between enhancement mode and depletion mode of the operation. The devices are fabricated with Al, Si, and Au gate metals with Au source–drain metal. Well-known p-type molecular semiconductor dinaphthothienothiophene (DNTT) is deposited by evaporation under high vacuum. It is observed that depending on the low- or high-work functions of the gate metal, the channel is absent or present at zero gate voltage. For work functions below and above 4.8 eV, the FET is in enhancement and depletion modes, respectively. We also show that this effect can be strongly observed for thin dielectrics. The experimental results are complemented by TCAD device simulations. This work will be crucial for high-frequency and precision logic-gate applications of organic as well as 2D materials devices.

High-Performance Cds Nanobelt Field-Effect Transistors With High-Kappa Hfo2 Top-Gate Dielectrics

High-performance CdS:P Nanoribbon Field-Effect Transistors Constructed with High-Κ Dielectric and Top-Gate Geometry

Synthesis of High Quality N-Type Cds Nanobelts and Their Applications in Nanodevices

Enhancement-mode CdS Nanobelts Field Effect Transistors and Phototransistors with HfO2 Passivation

High-Performance Nano-Schottky Diodes and Nano-MESFETs Made on Single CdS Nanobelts

High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Logic Gates Constructed on CdS Nanobelt Field-Effect Transistors with High-Κ HfO2 Top-Gate Dielectrics

Enhancement-Mode Nanowire (nanobelt) Field-Effect-Transistors with Schottky-Contact Source and Drain Electrodes

Back-gate ZnO Nanowire Field-Effect Transistors Each with a Top Ω Shaped Au Contact

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Enhancement-Mode Metal-Semiconductor Field-Effect Transistors Based on Single N-Cds Nanowires

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Ultrahigh-performance inverters based on CdS nanobelts.

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Selective Operation of Enhancement and Depletion Modes of Nanoscale Field-Effect Transistors

High performance Bi2Se3 nanowire field-effect transistors