Bandgap-graded CdS(x)Se(1-x) Nanowires for High-Performance Field-Effect Transistors and Solar Cells.
Dmitri Golberg
DOI: https://doi.org/10.1002/adma.201204434
IF: 29.4
2012-01-01
Advanced Materials
Abstract:Advanced MaterialsVolume 25, Issue 8 p. 1109-1113 Communication Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells Liang Li, Corresponding Author Liang Li lli@suda.edu.cn liang.li0216@gmail.com Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaDepartment of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China.Search for more papers by this authorHao Lu, Hao Lu Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaSearch for more papers by this authorZongyin Yang, Zongyin Yang Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorLimin Tong, Limin Tong Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorYoshio Bando, Yoshio Bando International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this authorDmitri Golberg, Dmitri Golberg International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this author Liang Li, Corresponding Author Liang Li lli@suda.edu.cn liang.li0216@gmail.com Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaDepartment of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China.Search for more papers by this authorHao Lu, Hao Lu Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaSearch for more papers by this authorZongyin Yang, Zongyin Yang Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorLimin Tong, Limin Tong Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorYoshio Bando, Yoshio Bando International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this authorDmitri Golberg, Dmitri Golberg International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this author First published: 10 December 2012 https://doi.org/10.1002/adma.201204434Citations: 69Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field-effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description adma_201204434_sm_suppl.pdf66.3 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume25, Issue8February 25, 2013Pages 1109-1113 RelatedInformation