Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

High performance Bi2Se3 nanowire field-effect transistors

Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Room temperature device performance of electrodeposited InSb nanowire field effect transistors

Si Nanowire - Array Source Gated Transistors

High-performance CdS:P Nanoribbon Field-Effect Transistors Constructed with High-Κ Dielectric and Top-Gate Geometry

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

SnSe field-effect transistors with improved electrical properties

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Single-crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

High performance silicene nanoribbon field effect transistors with current saturation

Uniform Bi2S3 Nanowires: Structure, Growth, and Field-Effect Transistors

Self-aligned Multi-Channel Silicon Nanowire Field-Effect Transistors

High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics