Abstract:Topological insulators (TI) have insulating band gaps in the bulk but gapless surface states topologically protected by time-reversal symmetry [1, 2]. Bi 2 Se 3 , a well-known semiconductor and thermoelectric material, is a TI with a bulk band gap of 0.35 eV and a single Dirac cone on the surface [2, 3]. Most current experimental research focus on the surface states of thin TI samples exfoliated from bulk material [4]. A few groups have reported modification of the surface conduction of such exfoliated TI samples by doping, applying a vertical electric field or polarized light. However, high-performance microelectronic devices based on topological insulators such as the analog of metal oxide semiconductor field effect transistors (MOSFETs) have not yet been reported. MOSFETs are the basic building blocks for digital and analog circuits. In this work, we fabricated and measured surrounding-gate Bi 2 Se 3 nanowire (NW) field-effect transistors. The current-voltage (I-V) characteristics were measured at different temperatures, exhibiting excellent performance: well-saturated output I-V curves and large on/off ratio. The surface metallic conduction can be separated from the bulk conduction with gate electric field at different temperatures. We found that the surface conduction increases as temperature decreases, while the bulk conductance decreases with decreasing temperature. This indicates that the carriers at the surface and the carriers inside the bulk Bi 2 Se 3 body have different properties. In addition, the Bi 2 Se 3 FET exhibits I-V characteristics different to conventional MOSFETs in the weak inversion region. The drain current (I DS ) increases significantly beyond 3ф t (ф t is thermal potential). This trend indicates that the Bi 2 Se 3 nanowire FET current does not follow the same diffusion current model as that describes conventional MOSFETs. We believe I DS in the weak/moderate conductive regions is also dominated by drift current. To further study the topological insulator properties, we have performed magneto-transport measurements and observed Aharonov-Bohm (AB) oscillation that arise from the surface conduction channel that surrounds the Bi 2 Se 3 NW in these FETs. The AB oscillations are obtained at low temperatures with a magnetic field oriented along the channel direction. The devices exhibit the anomalous AB effect [5] while maintaining high FET performance. The AB oscillations have a period of h / e and can be significantly tuned by the top surrounding gate. The resistance has a peak at B = 0 and decreases as the magnetic field increases. This phenomenon indicates that the surface states may be bound together by their spin in the circle and activated for conduction by the magnetic field along the axial direction of the circle. In summary, we have fabricated and measured Bi 2 Se 3 nanowire field effect transistors with excellent I-V characteristics. The devices exhibit anomalous AB oscillation, which may lead to new discovery of spin coupling in topological insulators. References: 1. J. E. Moore, Nature 464, 194 (2010) 2. M. Z. Hasan et al., 82, 3045 (2010). 3. X.-L. Qi et al., Rev. of Modern Phys. 83, 1057 (2011). 4. Y.L. Chen et al., Science 325 , 178-181 (2009). 5. Y. Zhang and A. Vishwanath, Phys. Rev. Lett. 105, 206601 (2010).

Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

High performance Bi2Se3 nanowire field-effect transistors

Observation and Control of the Anomalous Aharonov-Bohm Oscillation in Enhanced-Mode Topological Insulator Nanowire Field-Effect Transistors

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Topological insulator nanowires and nanoribbons.

Aharonov-Bohm interference in topological insulator nanoribbons

Synthesis and Field Emission Properties of Topological Insulator Bi2Se3nanoflake Arrays

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Phase Transition And Topological Transistors Based On Monolayer Na3bi Nanoribbons

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

Manipulating Surface States in Topological Insulator Nanoribbons

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Intrinsic Ferromagnetism and Quantum Transport Transition in Individual Fe-doped Bi2Se3 Topological Insulator Nanowires

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates