Phase Transition and Topological Transistors Based on Monolayer Na3Bi Nanoribbons

Bowen Shi,Hao Tang,Zhigang Song,Jingzhen Li,Lianqiang Xu,Shiqi Liu,Jie Yang,Xiaotian Sun,Ruge Quhe,Jinbo Yang,Jing Lu

DOI: https://doi.org/10.1039/d1nr02221k

IF: 6.7

2021-01-01

Nanoscale

Abstract:A topological transistor based on ML Na3Bi nanoribbon switched by electrical field is simulated by first-principles quantum transport simulation.

What problem does this paper attempt to address?

Nanoribbons of large-gap quantum spin Hall insulator: Electronic structures and transport properties

Meimei Wu,Chenqiang Hua,Biyu Song,Guoxiang Zhi,Tianchao Niu,Miao Zhou

DOI: https://doi.org/10.1088/1367-2630/ad2a82

2024-02-20

New Journal of Physics

Abstract:Two-dimensional (2D) Bi grown on semiconductor substrate, a large-gap quantum spin Hall (QSH) insulator characterized by a (px, py)-orbital hexagonal lattice, has been theoretically proposed and experimentally confirmed. Here, by combining tight-binding modeling with first-principles calculations, we investigate the electronic structures and quantum transport properties of Bi nanoribbons (NRs), focusing on the topological edge states for nanoelectronics. We reveal that band gap emerges due to the quantum confinement, and the gaps size depends crucially on the width and edge shape: For zigzag NRs, the gap decreases monotonically with the increase of width; while for armchair NRs, it can be categorized into three subgroups with band-gap hierarchies of Eg(3p-1)> Eg(3p)> Eg(3p+1), so that the overall relation is an oscillating dependence dumped by 1/width decay. Quantum transport calculations demonstrate that the conductance is quantized to 2e2/h, and an applied gate voltage can efficiently regulate the conductance plateau, originating from the interplay between gate voltage and topological gaps. Furthermore, the quantized conductance remains robust against strong disorder, suggesting the unique advantage of topological states for electronic transport. This work not only provides fundamental insights into the electronic properties of topological insulator nanostructures, but also sheds light on the potential applications of exotic states for quantum devices compatible with semiconductor technology.

physics, multidisciplinary
Topological phase transition in a narrow bandgap semiconductor nanolayer

Zhi-Hai Liu,Wenkai Lou,Kai Chang,H. Q. Xu

2023-10-26

Abstract:Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development towards topological quantum computing. Here we demonstrate that a topological phase transition can be achieved in a narrow bandgap semiconductor nanolayer under application of a perpendicular electric field. Based on full band structure calculations, it is shown that the topological phase transition occurs at an electric-field induced band inversion and is accompanied by a sharp change of the $\mathbb{Z}_{2}$ invariant at the critical field. We also demonstrate that the nontrivial topological phase is manifested by the quantum spin Hall edge states in a band-inverted nanolayer Hall-bar structure. We present the phase diagram of the nanolayer in the space of layer thickness and electric field strength, and discuss the optimal conditions to achieve a large topological bandgap in the electric-field induced topological phase of a semiconductor nanolayer.

Mesoscale and Nanoscale Physics
Aharonov-Bohm interference in topological insulator nanoribbons

Hailin Peng,Keji Lai,Desheng Kong,Stefan Meister,Yulin Chen,Xiao-Liang Qi,Shou-Cheng Zhang,Zhi-Xun Shen,Yi Cui

DOI: https://doi.org/10.1038/nmat2609

2009-08-24

Abstract:Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface and verified by angle-resolved photoemission spectroscopy experiments. Here, we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coverage of two-dimensional electrons on the entire surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation and its temperature dependence demonstrate the robustness of these electronic states. Our results suggest that topological insulator nanoribbons afford novel promising materials for future spintronic devices at room temperature.

Mesoscale and Nanoscale Physics,Materials Science
Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

Hao Zhu,Erhai Zhao,Curt A. Richter,Qiliang Li

DOI: https://doi.org/10.1149/06417.0051ecst

2014-01-01

ECS Transactions

Abstract:Topological insulator is characterized as a new class of materials which have an insulating band gap in the bulk and gapless surface state which is protected by its intrinsic time-reversal symmetry. Here, we report high-performance topological insulator nanowire field effect transistors (FETs) with sharp turn-on, clear cutoff current, large On/Off current ratio (~ 108) and well-saturated, strong inversion-mode output current-voltage characteristics. The metallic electron transport at surface, with effective mobility of 200 cm2V-1s-1 ~ 1000 cm2V-1s-1, and bulk conduction, with activation energy close to band gap of bulk Bi2Se3 can be effectively separated and tuned by gated field effect. We also report the first experimental observation of anomalous Aharonov-Bohm oscillation in Bi2Se3 nanowire FET under strong surface disorder. The magnetotransport properties demonstrated here of topological insulator nanostructure provide effective approaches of surface states modulations, and can enable more spintronics device applications and sensing applications.
Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2

H. Simchi,M. Simchi,M. Fardmanesh,F. M. Peeters

DOI: https://doi.org/10.48550/arXiv.1803.03390

2018-03-09

Mesoscale and Nanoscale Physics

Abstract:We study topological phase transitions and topological quantum field effect transistor in monolayer Molybdenum Disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q^2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall (QAH), quantum spin Hall (QSH), and spin quantum anomalous Hall effect (SQAH) regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q^2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q^2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.
Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Hao Zhu,Curt A. Richter,Erhai Zhao,John E. Bonevich,William A. Kimes,Hyuk-Jae Jang,Hui Yuan,Haitao Li,Abbas Arab,Oleg Kirillov,James E. Maslar,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1038/srep01757

2013-01-01

Abstract:Topological insulators are unique electronic materials with insulating interiors and robust metallic surfaces. Device applications exploiting their remarkable properties have so far been hampered by the difficulty to electrically tune the Fermi levels of both bulk and thin film samples. Here we show experimentally that single-crystal nanowires of the topological insulator Bi 2 Se 3 can be used as the conduction channel in high-performance field effect transistor (FET), a basic circuit building block. Its current-voltage characteristics are superior to many of those reported for semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio and well-saturated output current. The metallic electron transport at the surface with good FET effective mobility can be effectively separated from the conduction of bulk Bi 2 Se 3 and adjusted by field effect at a small gate voltage. This opens up a suite of potential applications in nanoelectronics and spintronics.
Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Renzhong Du,Weiwei Zhao,Jian Wang,Yuewei Yin,Sining Dong,Xiaoguang Li,Chao-Xing Liu,Moses H. W. Chan,Qi Li

2013-01-01

Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…
Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Jianwei Huang,Sheng Li,Chiho Yoon,Ji Seop Oh,Han Wu,Xiaoyuan Liu,Nikhil Dhale,Yan-Feng Zhou,Yucheng Guo,Yichen Zhang,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Xiqu Wang,Chun Ning Lau,Robert J. Birgeneau,Fan Zhang,Bing Lv,Ming Yi

DOI: https://doi.org/10.1103/physrevx.11.031042

2021-01-01

Physical Review X

Abstract:Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: (i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification and (ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In this paper, we present experimental evidence for a room-temperature topological phase transition in the quasi-1D material Bi4I4, mediated via a first-order structural transition between two distinct stacking orders of the weakly coupled chains. Using high-resolution angle-resolved photoemission spectroscopy on the two natural cleavable surfaces, we identify the high-temperature beta phase to be the first weak topological insulator with two gapless Dirac cones on the (100) surface and no Dirac crossing on the (001) surface, while in the low-temperature a phase, the topological surface state on the (100) surface opens a gap, consistent with a recent theoretical prediction of a higher-order topological insulator beyond the scope of the established topological materials databases that hosts gapless hinge states. Our results not only identify a rare topological phase transition between first-order and second-order topological insulators but also establish a novel quasi-1D material platform for exploring unprecedented physics.
Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Jinsong Zhang,Cui-Zu Chang,Peizhe Tang,Zuocheng Zhang,Xiao Feng,Kang Li,Li-li Wang,Xi Chen,Chaoxing Liu,Wenhui Duan,Ke He,Qi-Kun Xue,Xucun Ma,Yayu Wang

DOI: https://doi.org/10.1126/science.1230905

2016-01-01

Abstract:The breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.
A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Yumei Jing,Shaoyun Huang,Jinxiong Wu,Mengmeng Meng,Xiaobo Li,Yu Zhou,Hailin Peng,Hongqi Xu

DOI: https://doi.org/10.1002/adma.201903686

IF: 29.4

2019-01-01

Advanced Materials

Abstract:Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi2 Te3 nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb-diamond-shaped charge-stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low-energy-dissipative devices, and quantum information processing.
Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na3Bi Films.

Huinan Xia,Yang Li,Min Cai,Le Qin,Nianlong Zou,Lang Peng,Wenhui Duan,Yong Xu,Wenhao Zhang,Ying-Shuang Fu

DOI: https://doi.org/10.1021/acsnano.9b04933

IF: 17.1

2019-01-01

ACS Nano

Abstract:Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality Na3Bi thin films with R3*R3 reconstruction on graphene, and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in Na3Bi films, providing spectroscopic evidences of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on 3 and 4 monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a Na3Bi film can be tuned via certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in Na3Bi films and achieving potential applications in topological devices.
Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang

DOI: https://doi.org/10.1103/PhysRevB.105.L201404

IF: 3.7

2022-01-01

Physical Review B

Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect, the axion insulator state, and high-Chern-number and high-temperature Chern insulator (CI) states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by similar to 40-60 degrees, the Hall resistance deviates from the quantization value, and a colossal, anisotropic magnetoresistance is detected. Theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from the ferromagnetic state to the canted antiferromagnetic state induces a topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. These findings reveal a kind of topological phase transition associated with magnetism and spin-orbit coupling. In this letter, we suggest that MnBi2Te4 is an ideal platform for exploring topological quantum phase transitions, and it provides an efficient means for modulating topological quantum states and topological quantum phase transitions.
Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Yumei Jing,Shaoyun Huang,Jinxiong Wu,Mengmeng Meng,Xiaobo Li,Yu Zhou,Hailin Peng,H. Q. Xu

DOI: https://doi.org/10.1002/adma.201903686

2019-09-01

Abstract:Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topological insulators. This communication reports on the successful realization of single-electron transistor devices in Bi$_2$Te$_3$ nanoplates by state of the art nanofabrication techniques. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb diamond shaped charge stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in three-dimensional topological insulators, which should greatly stimulate research towards confined topological states, low energy-dissipative devices and quantum information processing.

Mesoscale and Nanoscale Physics,Materials Science
Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang

DOI: https://doi.org/10.48550/arXiv.2107.03224

2021-07-07

Mesoscale and Nanoscale Physics

Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion insulator state, high-Chern-number and high-temperature Chern insulator states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by around 40-60 degrees, the Hall resistance deviates from the quantization value and a colossal, anisotropic magnetoresistance is detected. The theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from ferromagnetic state to canted antiferromagnetic state induces a topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Our work provides an efficient means for modulating topological quantum states and topological quantum phase transitions.
Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Yaoxin Li,Jiaheng Li,Ke He,Yong Xu,Jinsong Zhang,Yayu Wang

DOI: https://doi.org/10.1038/s41563-019-0573-3

IF: 41.2

2020-01-06

Nature Materials

Abstract:The intricate interplay between non-trivial topology and magnetism in two-dimensional materials can lead to the emergence of interesting phenomena such as the quantum anomalous Hall effect. Here we investigate the quantum transport of both bulk crystal and exfoliated MnBi2Te4 flakes in a field-effect transistor geometry. For the six septuple-layer device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristics of an axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic-field range and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2, where h is Planck's constant and e is electron charge. Our results pave the way for using even-number septuple-layer MnBi2Te4 to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Topological and magnetic phase transition in silicene-like zigzag nanoribbons

Xiao Long Lv,Yang Xie,Hang Xie

DOI: https://doi.org/10.1088/1367-2630/aabc6e

2018-03-08

Abstract:Spin-orbital interactions (SOI) in silicene results in the quantum spin Hall effect, while the Hubbard-induced Coulomb interaction in zigzag nanoribbons often generates a band gap with the anti-ferromagnetic (AF) spin orders on two edges. In this paper we systematically study these two joint contributions to the zigzag silicene-like nanoribbons (zSiNR). Some topological and magnetic phase transitions are investigated with different material parameters and external fields. We find when the ribbon width or the SOI value exceeds some critical value, the SOI may overcome the Coulomb interaction and the system transits from a band insulator to a topological insulator: the quantum-spin-Hall or the spin quantum-anomalous Hall state. We also find some magnetic phase transition exist in the Hubbard-dominated zSiNR systems when the exchange field or the electric field goes beyond some critical values. At last we observe a double topological/magnetic phase transition in a Hubbard-SOI-balanced zSiNR system before the magnetic and topological phases are destroyed by a strong electric field.

Mesoscale and Nanoscale Physics
Light‐Induced Quantum Anomalous Hall Effect on the 2D Surfaces of 3D Topological Insulators

Haowei Xu,Jian Zhou,Ju Li

DOI: https://doi.org/10.1002/advs.202101508

IF: 15.1

2021-07-02

Advanced Science

Abstract:Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time-reversal symmetry (TRS) breaking. In most cases, one can break the TRS of time-reversal invariant topological materials to yield QAH effect, which is essentially a topological phase transition. However, conventional topological phase transition induced by external field/stimulus usually needs a route along which the bandgap closes and reopens. Hence, the transition occurs only when the magnitude of field/stimulus is larger than a critical value. In this work the authors propose that using gapless systems, the transition can happen at an arbitrarily weak (but finite) external field strength. For such an unconventional topological phase transition, the bandgap closing is guaranteed by bulk-edge correspondence and symmetries, while the bandgap reopening is induced by external fields. This concept is demonstrated on the 2D surface states of 3D topological insulators like Bi2Se3, which become 2D QAH insulators once a circularly polarized light is turned on, according to the Floquet time crystal theory. The sign of quantized Chern number can be controlled via the chirality of the light. This provides a convenient and dynamic approach to trigger topological phase transitions and create QAH insulators.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Topological insulator nanowires and nanoribbons.

Desheng Kong,Jason C Randel,Hailin Peng,Judy J Cha,Stefan Meister,Keji Lai,Yulin Chen,Zhi-Xun Shen,Hari C Manoharan,Yi Cui

DOI: https://doi.org/10.1021/nl903663a

IF: 10.8

2010-01-01

Nano Letters

Abstract:Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications, Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se3 nanomaterials with a variety of morphologies. The synthesis of Bi2Se3 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with similar to 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers, STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.
One-dimensional Topological Superconductivity at the Edges of Twisted Bilayer Graphene Nanoribbons

Zhen-Hua Wang,Fuming Xu,Lin Li,Rong Lu,Bin Wang,Wei-Qiang Chen

DOI: https://doi.org/10.1103/physrevb.100.094531

2019-01-01

Abstract:Twisted bilayer graphene is one of the simplest van der Waals structures, and its inhomogeneous interlayer coupling can induce rich electronic properties. In twisted bilayer graphene nanoribbons (tBLGNRs), the interlayer coupling strengths are different for two ribbon edges due to the inhomogeneous bonding, which splits the edge states into two individuals in energy. The lower-energy state, localizing at the ribbon edge with the stronger interlayer coupling, is a good candidate to generate one-dimensional (1D) topological superconductivity in the presence of Rashba spin-orbit coupling, Zeeman field, and s-wave superconductivity. Majorana zero modes (MZMs) are found to be localized at both ends of this edge. The topological invariants of the system are explored by evaluating the Berry phase for infinite-length ribbons and Majorana polarization for quasi-1D ribbons, giving the same topological phase diagram. More importantly, by adjusting interlayer dislocation and uniaxial strain of tBLGNRs across the critical values, the lower-energy edge changes and 1D topological superconductivity can "jump" from one ribbon edge to the other one. Finally, by applying a gate voltage bias between bilayers or changing the interlayer distance, a MZM can transfer along the ribbon edge. The tBLGNRs provide an alternative platform to study 1D topological superconductivity and MZMs.

Phase Transition and Topological Transistors Based on Monolayer Na3Bi Nanoribbons

Nanoribbons of large-gap quantum spin Hall insulator: Electronic structures and transport properties

Topological phase transition in a narrow bandgap semiconductor nanolayer

Aharonov-Bohm interference in topological insulator nanoribbons

Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2

Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na3Bi Films.

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

Light‐Induced Quantum Anomalous Hall Effect on the 2D Surfaces of 3D Topological Insulators

Topological insulator nanowires and nanoribbons.

One-dimensional Topological Superconductivity at the Edges of Twisted Bilayer Graphene Nanoribbons