Abstract:A perpetual quest in the field of topological quantum matter is to search for electronic phases with unprecedented band topology and transport phenomena. The most prominent example is the discovery of topological insulators, in which band inversion leads to topologically nontrivial bulk electronic structure and metallic boundary states. In two-dimensional topological insulators with time-reversal symmetry, a pair of helical edge states gives rise to the quantum spin Hall effect. When the time-reversal symmetry is broken by magnetic order, only one chiral edge mode remains and the quantum anomalous Hall effect emerges in zero magnetic field. This quantum Hall phase without Landau levels, first observed in magnetically doped topological insulators, is now called the Chern insulator. The recently discovered MnBi2Te4 combines intrinsic magnetism and nontrivial topology in one material, providing an ideal platform for exploring novel topological phases. Here, we investigate the transport properties of exfoliated MnBi2Te4 in exceedingly high magnetic fields up to 60 T. By varying the gate voltage, we observe systematic and yet uniquely complex evolution of quantized Hall plateaus with Chern numbers from C = -3 to +2. More surprisingly, a novel phase characterized by an extremely broad zero Hall plateau emerges as the most robust ground state in the high field limit. Theoretical calculations reveal that this C = 0 phase arises from the coexistence of a connate Chern band with C = -1 and a Zeeman-effect-induced Chern band with C = +1, as corroborated by nonlocal transport measurements. This helical Chern insulator phase with broken time-reversal symmetry represents an unexpected new member of the quantum Hall family, and manifests a new route to change the band topology by using magnetic field.

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

Helical Chern insulator phase with broken time-reversal symmetry in MnBi$_2$Te$_4$

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Intrinsic Topological Phases in Mn2Bi2Te5 Tuned by the Layer Magnetization

Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi 2 Te 4

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4

Half-quantized Anomalous Hall Effect in Magnetic Axion Insulator MnBi$_2$Te$_4$/(Bi$_2$Te$_3$)$_n$

Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect.

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Large bandgap quantum anomalous hall insulator in a designer ferromagnet-topological insulator-ferromagnet heterostructure

Electric Control of a Canted-Antiferromagnetic Chern Insulator

Tunable Topological Phases in a Natural MnSb2Te4/(Sb2Te3)2 superlattice

Dynamical Axion State with Hidden Pseudospin Chern Numbers in MnBi_2Te_4-based Heterostructures

In-plane Magnetic-Field-induced Quantum Anomalous Hall Plateau Transition

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator