Abstract:Over the past several years, the formation of nanowire heterostructures via a solid-state reaction between a semiconductor nanowire and metal contact pads has attracted great interest. This is owing to its ready application in nanowire field-effect transistors (FETs) with a well-controlled channel length using a facile rapid thermal annealing process. We report the effect of oxide confinement on the formation of Ge nanowire heterostructures via a controlled reaction between a vapor-liquid-solid-grown, single-crystalline Ge nanowire and Ni pads. In contrast to the previous formation of Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni(2)Ge and Ge with the confinement of Al(2)O(3) during annealing. Significantly, back-gate FETs based on this Ni(2)Ge/NiGe/Ge/NiGe/Ni(2)Ge heterostructure demonstrated a high-performance p-type transistor behavior, showing a large on/off ratio of more than 10(5) and a high normalized transconductance of 2.4 μS/μm. The field-effect hole mobility was extracted to be 210 cm(2)/(V s). Temperature-dependent I-V measurements further confirmed that NiGe has an ideal ohmic contact to p-type Ge with a small Schottky barrier height of 0.11 eV. Moreover, the hysteresis during gate bias sweeping was significantly reduced after Al(2)O(3) passivation, and our Ω-gate Ge nanowire FETs using Al(2)O(3) as the top-gate dielectric showed an enhanced subthreshold swing and transconductance. Therefore, we conclude that the Al(2)O(3) layer can effectively passivate the Ge surface and also serve as a good gate dielectric in Ge top-gate FETs. Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors.

Single-crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Synthesis And Transistor Performances Of High Quality Single Crystalline Vapor-Liquid-Solid Grown Si1-Xgex Nanowire

Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

High performance Bi2Se3 nanowire field-effect transistors

Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires.

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors.

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Sic Nanowire Field-Effect Transistors Based On Dielectrophoresis

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires