Abstract:The direct observation of the Ni‐assisted GaP nanowire growth process via transmission electron microscopy reveals two different growth mechanisms by Trimethylgallium (TMGa) precursor supply variations. The decrease of TMGa flow results in the formation of Ni2P phase as growth promoters with cation exchange reaction in addition to interface diffusion as the mass transport pathway, leading to a much higher growth rate. Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle‐NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni2Ga3 phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni2P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties.

Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires.

Solution-phase synthesis of nickel phosphide single-crystalline nanowires

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing

Formation of Nickel Germanides from Ni Layers with Thickness below 10 Nm

The Phase Selection Law in the Growth of Hexagonal Diamond Silicon Nanowires by Controlling Chemical Potential

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Single-crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors

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Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

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Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Catalytic Growth of Germanium Oxide Nanowires, Nanotubes, and Germanium Nanowires: Temperature-Dependent Effect

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Controlled growth of highly stable and conducting Ge core/ BCN shell nanowire

Synthesis and characterization of phase-change nanowires.

In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires

Large Anisotropy of Electrical Properties in Layer-Structured In2Se3 Nanowires.

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size