Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays
Tevye Kuykendall,Peter J. Pauzauskie,Yanfeng Zhang,Joshua Goldberger,Donald Sirbuly,Jonathan Denlinger,Peidong Yang
DOI: https://doi.org/10.1038/nmat1177
IF: 41.2
2004-01-01
Nature Materials
Abstract:Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics 1 . Elucidation of the vapour–liquid–solid growth mechanism 2 has already enabled precise control over nanowire position and size 1 , 3 , 4 , 5 , 6 , 7 , 8 , yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal–organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) γ-LiAlO 2 and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [11̄0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.