Abstract:We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400 ~ 500°C to convert the Ge nanowire to a single-crystalline Ni 2 Ge/Ge/Ni 2 Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni 2 Ge/Ge/Ni 2 Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni 2 Ge with the confinement of Al 2 O 3 during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the Ni x Ge/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performance p -type behavior with a high on/off ratio of 10 5 and a field-effect hole mobility of 210 cm 2 /Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

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Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Fabrication of highly oriented 4H-SiC gourd-shaped nanowire arrays and their field emission properties

Well-aligned SiC nanoneedle arrays for excellent field emitters

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

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Field Emission From Crystalline Copper Sulphide Nanowire Arrays

Quasi-Aligned Single-Crystalline Gan Nanowire Arrays

Needlelike Bicrystalline GaN Nanowires with Excellent Field Emission Properties.

Crystal Phase Control in Self-Catalyzed GaAs Nanowires Grown on Pre-Etched Si Substrates

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing

Synthesis of Large-Area Germanium Cone-Arrays for Application in Electron Field Emission

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

Field Emission from Single-Crystalline Hfc Nanowires

Fabrication of Vertically Aligned Single‐Crystalline Boron Nanowire Arrays and Investigation of Their Field‐Emission Behavior

Field Emission Properties of Single Crystal Chromium Disilicide Nanowires

Template-free Electrosynthesis of Crystalline Germanium Nanowires from Solid Germanium Oxide in Molten CaCl2–NaCl

Field Emission from Nonaligned SiC Nanowires