Abstract:One-dimensional (1D) nano-materials have attracted a plenty of attention due to their novel structures and properties. Our group has carried out researches on synthesis, structure and property of 1D nano-materials, which are introduced in this paper. First, size effects on the crystal structure of Ag nanowires and on Young’s modulus in [0001] oriented ZnO nanowires, respectively, have been revealed and modeled. The former is concerning the systemic energy of an individual Ag nanowire. The latter is caused by the surface stiffening effect arising from surface relaxation induced bond length contractions in the ZnO nanowires. Second, structures of 1D helical nano-materials including SWCNT (single-walled carbon nanotube), B-DNA and MWCNT (mutli-walled carbon nanotube) have been studied. It is shown that there is strong orientation dependence of diffraction intensities from SWCNT and B-DNA, which can even result in certain layer lines missing in their diffraction patterns. Also, it is demonstrated that high-resolution transmission electron microscope (TEM) images of sidewall regions of MWCNTs are not structural ones and from the interference of the {0002} and the {1011} diffraction waves. Third, arrays of four types of 1D heterojunctions have been synthesized. Among these 1D heterojunctions, the interfacial structures of the Ni/MWCNT/a-CNT(amorphous carbon nanotube) heterojunctions show that multiple outer walls in the MWCNTs can simultaneously participate in electrical transport. The electrical properties of the Ni/MWCNT/a-CNT and the Ag/a-CNT heterojunctions have been measured. As a result, it is found that the contacts between the Ag nanowires and the a-CNTs are ohmic ones with universal significance, and that each Ni/MWCNT/ a-CNT contains two diodes connected in series face-to-face. Moreover, most of the diodes have the most nearly ideal characteristics of Schottky contacts, indicated by quantitative analysis with the thermionic emission theory. Last, our group has developed a novel technique for rapidly producing large-area highly-oriented Si nanowire arrays on Si wafers by scratching the Si surface with metal nanoparticles near room temperature in HF solution. By this method, Si nanowires with desirable axial crystallographic directions, desirable doping characteristics and remarkable antireflection property can be readily obtained. The Si nanowire arrays have the potential applicability as an antireflective layer for photovoltaic devices and optical detectors. Furthermore, a combination of this method and the nanosphere lithography has been developed to fabricate large-scale Si and Si 1−x Ge x quantum dot arrays with controllable height, diameter and center-to-center distance.

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Single-crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires.

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

Silicon Nanowires, Catalytic Growth and Electrical Characterization

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation

Size Dependence in One-Dimensional Nano-Materials and One-Dimensional Heterojunctions