Abstract:Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a potential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performances of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices.To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant activation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 1020 cm-3 is achieved, and the corresponding contact resistivity is reduced to 3.8 10-7 cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement in performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Study on Schottky Barrier Modulation of NiGe/Ge by Ion-Implantation after Germanidation Technique

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Reduction of Junction Leakage Current in Sub-10 Nm Ultra-Shallow NiGe/n-Ge Schottky Junctions by Dopant Segregation

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

DC and Analog/RF Investigation on Germanium Mosfet with Double-Schottky-barrier Source/drain

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Demonstration of Germanium nMOSFETs with interface passivation of ozone pre-gate treatment and ozone ambient annealing

Improving Performance of Al2O3/AlN/GaN MOSC-HEMTs Via Microwave Annealing

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure