Abstract:Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a potential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performances of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices.To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant activation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 1020 cm-3 is achieved, and the corresponding contact resistivity is reduced to 3.8 10-7 cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement in performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al 2 O 3 /GeO x /Ge Gate-Stacks

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

(Invited) Significant Enhancement of High-Ns Electron Mobility in Ge N-Mosfets with Atomically Flat Ge/GeO2 Interface

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Reconsideration of Electron Mobility in Ge N-Mosfets from Ge Substrate Side — Atomically Flat Surface Formation, Layer-by-layer Oxidation, and Dissolved Oxygen Extraction

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Mobility Improvement in Accumulation-Mode GeOI Pmosfets with Back Interface Rearrangement by H2 Annealing

Ge CMOS Technology with Advanced Interface and Junction Engineering.

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses