Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Mobility Improvement in Accumulation-Mode GeOI Pmosfets with Back Interface Rearrangement by H2 Annealing

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al 2 O 3 /GeO x /Ge Gate-Stacks

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

High-Mobility Ge Pmosfet with 1-Nm EOT $\hbox{al}_{2} \hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

(Invited) Significant Enhancement of High-Ns Electron Mobility in Ge N-Mosfets with Atomically Flat Ge/GeO2 Interface