Abstract:Interface roughness strongly influences the performance of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Experimental Study on Hole and Electron Effective Masses in Inversion Layers of Ge (100), (110) and (111) P- and N-Mosfets

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain

Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al 2 O 3 /GeO x /Ge Gate-Stacks

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Effect of Interface Roughness on the Carrier Transport in Germanium Mosfets Investigated by Monte Carlo Method

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Low-Field Mobility and Carrier Transport Mechanism Transition in Nanoscale Mosfets

A discussion on the universality of inversion layer mobility in MOSFET's

Universality of electron mobility in Ge MOSFETs investigated by Monte Carlo simulation