Abstract:A detailed numerical study on Ge and Si ultrathin-body (UTB) p-type double-gate MOSFET (pDG-FET) is carried out with the help of in-house developed non-equilibrium Green's function (NEGF) simulator employing the six-band k·p model. Six typical confinement/transport crystal orientation configurations and three recent technology nodes are taken into account for better evaluation of device performance. The ballistic velocity and effective mass (m <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) are investigated and compared in detail between 3nm-thick Ge and Si films, with a better understanding of crystal orientation effect obtained. Device performance metrics, such as the ballistic ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and subthreshold swing (SS), are also extracted and compared. With the source-to-drain tunneling (SDT) effect characterized, further numerical analysis indicates that Ge device suffers from more terrible SDT than Si device at all the considered channel lengths. As the physics behind is clarified, some expectations and suggestions for improving device performance, especially for Ge case, are addressed in the end.

Experimental Study on Hole and Electron Effective Masses in Inversion Layers of Ge (100), (110) and (111) P- and N-Mosfets

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Research Progress in Ge-based Advanced Field Effect Transistor Technology

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

High-Mobility Ge Pmosfet with 1-Nm EOT $\hbox{al}_{2} \hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stack Fabricated by Plasma Post Oxidation

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices