Abstract:An appreciable mobility enhancement up to 35% is found in p-channel MOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack, as compared to a Si-channel reference transistor under an identical gate stack. A distorted effective mobility curve with a slow mobility roll-off at low vertical electric field is however extracted for the Si0.7Ge0.3 devices following the standard split-CV measurement procedure. A high density of interface traps on the order of 1012 cm−2eV−1 is found in these Si0.7Ge0.3 devices using charge-pumping measurements. Thus, this distortion is attributed partly to trapping of a significant fraction of the inversion carriers at the interface between the high-κ dielectrics and the Si0.7Ge0.3 channel, thus defeating the validity of the usual formulation for mobility extraction. By taking into account the trapped carriers that are detectable by the split-CV measurement but do not contribute to the drain conductance, a corrected effective mobility curve is obtained. The distortion of the effective mobility curve is nonetheless mainly due to mobility degradation as a result of Coulomb scattering of the mobile channel carriers by the charged interface defects, i.e. charged traps or trapped carriers that remain charged.

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Effect of Interface Roughness on the Carrier Transport in Germanium Mosfets Investigated by Monte Carlo Method

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Universality of electron mobility in Ge MOSFETs investigated by Monte Carlo simulation

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Evaluations of Scaling Properties for Ge on Insulator Mosfets in Nano-Scale

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Experimental Study on Hole and Electron Effective Masses in Inversion Layers of Ge (100), (110) and (111) P- and N-Mosfets

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

MOS Interface Engineering for High-Mobility Ge CMOS

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors