Abstract:Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the π 11 and π 12 electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm 2 V −1 s −1 at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm 2 V −1 s −1 at high strain. We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility.

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Monte Carlo Simulation of Electron Mobility in Strained Si Dg-Fets with Tb Bandstructure Calculation

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Mobility Enhancement of Strained GaSb P-Channel Metal Oxide Semiconductor Field-Effect Transistors with Biaxial Compressive Strain

K·p and Monte Carlo Studies of Hole Mobility in Strained-Si Pmos Inversion Layers

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Phonon-limited mobility for electrons and holes in highly-strained silicon

Electrical properties and temperature behavior of strained-Si N-MOSFETs

Universality of electron mobility in Ge MOSFETs investigated by Monte Carlo simulation

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate