Abstract:Abstract Application of strained channel in Metal-oxide-semiconductor Field Effect Transistors (MOSFET) technology influences the electrical properties due to the significant changes in the energy band structure of silicon lattices. Thus, in this paper, a comprehensive analysis is conducted to investigate the impact of strained channel towards several electrical properties of junctionless double-gate MOSFET. The comparative analysis is carried out by simulating two different sets of device structure which are JLDGM device (without strain) and junctionless double-gate strained MOSFET (JLDGSM) device. The results show that the strained channel has improved the on-state current (I ON ), on-off ratio, transconductance (g m ) and transconductance generation factor (TGF) by approximately 58 %, 98%, 98%, and 44% respectively. The significant improvement is mainly attributed to the presence of biaxial strain boosting the electron mobility in the channel. The intrinsic gate delay (τ int ) has significantly reduced by approximately 52% as the strained channel is applied. Since the variation of intrinsic gate capacitances (C int ) is very minimal (4%) as the strained channel is applied, the gate delay is dominantly governed by the drain current. However, the application of strain channel has increased the dynamic power dissipation (P dyn ) for approximately 19% mainly due to slightly increased intrinsic gate capacitances.

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