Abstract:Enhancing the mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) with narrow channel widths is highly sensitive to the stress effects of Si channel when related advanced strain engineering is introduced and is compatible with semiconductor processes. In practice, layouts have significant effect on the device performance, especially for the protruding gate width on shallow trench isolation structures. The geometric parameter is investigated by systematically analysing an n-channel MOSFET composed of silicon-carbon (SiC) stressors embedded in the source and drain (S/D) regions and a tensile contact etch stop layer (CESL) using three-dimensional finite element simulation. Tensile CESL (1.1 GPa) and a SiC S/D stressor with a carbon mole fraction of 1.65% are loaded on the structure. The difference in the interactive percentages between the mechanical bending effect of the CESL from the top of the poly gate and the downward force of the CESL adjacent to the spacer sidewall of the gate occurs when the protruding gate width is increased. Results indicate that mobility was highly enhanced by approximately 72.5% at a width of approximately 0.2 μm. The mechanical bending effect becomes dominant when the gate width is more than 0.2 μm. Consequently, the mobility gain decays and consequently converges toward a constant.

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Comparative Study on Strain Induced Electrical Properties Modulation of Si P-N Junctions

Electrical Properties of Strained Si P-N Junctions

Mechanical Tensile Strain Induced Gate and Substrate Currents Change in N and P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Comprehensive Study of NBTI under Compressive and Tensile Strain

Experimental Study on Nbti Degradation Behaviors in Si Pmosfets under Compressive and Tensile Strains

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Electrical properties and temperature behavior of strained-Si N-MOSFETs

Strain Induced Quantum Effect in Semiconductors

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Mobility Enhancement of Strained GaSb P-Channel Metal Oxide Semiconductor Field-Effect Transistors with Biaxial Compressive Strain