Abstract:Negative differential capacitance induced by the energy barrier formed by the nonlinear ferroelectric insulating layer during the phase transition in negative capacitance field effect transistors (NCFETs) can break through the fundamental thermionic limit of the metal-oxide-semiconductor field effect transistors (MOSFETs), which is set at a subthreshold swing (SS) of 60mV/dec at room temperature for low-power switching. Strain engineering has been shown effective for modulating both intrinsic and coupled properties of ferroelectric materials. However, while the modulation of negative capacitance (NC) by strain primarily remains within theoretical predictions, there is a lack of experimental studies to explore its effect on NCFETs. This study introduces strain to NCFETs by utilizing the magnetostriction of Terfenol-D upon the applied magnetic field. Results reveal a decrease in SSmin from 43.5mV/dec to 15.2mV/dec with a compressive strain increase from 0 to -0.005%. Additionally, theoretical results by using time-evolving Ginzburg-Landau equations and Kirchhoff's laws demonstrate that compressive strain enhances both the amplitude and duration of transient NC in CuInP2S6, while vice versa under tensile strain. This work offers valuable insights for the design of NCFET devices.

Comprehensive Study of NBTI under Compressive and Tensile Strain

Experimental Study on Nbti Degradation Behaviors in Si Pmosfets under Compressive and Tensile Strains

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Mechanical Tensile Strain Induced Gate and Substrate Currents Change in N and P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

NBTI-related issues in deep submicron pMOSFETs

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.