Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Recovery Characteristics of Nbti of Pmosfets with Oxynitride Dielectrics under Drain Bias

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Localized Thermal Effect Enhanced NBTI in Multifin Pfinfets under Low Drain Bias

NBTI-related issues in deep submicron pMOSFETs

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Understand NBTI Mechanism by Developing Novel Measurement Techniques

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets

The Effect of Nitrogen on the Energy Distribution of Hole Traps Generated under Negative Bias Temperature Stress

Negative Bias Temperature Instability of HfN/HfO2 Gated P-Mosfets