Abstract:A new on-line methodology is used to characterize the negative bias temperature instability ( NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by ID - VD characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on the fly method. It is found that both reaction - diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90 degrees C and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction - diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction - diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.

The Effect of Nitrogen on the Energy Distribution of Hole Traps Generated under Negative Bias Temperature Stress

The Energy Distribution of NBTI-induced Hole Traps in the Si Band Gap in PNO Pmosfets

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Impact of Electron Trapping on Energy Distribution Characterization of NBTI-Related Defects for Si P-Finfets

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Ultrathin Oxynitride P-Mosfet Recovery Characteristics under NBTI Stress

Interface Trap Generation and Recovery Mechanisms During and after Positive Bias Stress in Metal-Oxide-semiconductor Structures

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method