Abstract:The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET was investigated by accelerated stress tests. The results show that NBTI leads to a threshold voltage negative shift, saturate drain current reduction and transconductance degradation of the PMOSFET. Next, the relationship between the threshold voltage shift and stress time, gate bias and temperature, and the channel length is investigated, and the NBTI lifetime prediction model is established. The results show that the NBTI lifetime of a 130 nm T-Gate PDSOI PMOSFET is approximately 18.7 years under the stress of VG = -1.2 V and T = 125 °C. Finally, the effect of the floating-body effect on NBTI of PDSOI PMOSFET is investigated. It is found that the NBTI degradation of T-Gate SOI devices is greater than that of the floating-body SOI devices, which indicates that the floating-body effect suppresses the NBTI degradation of SOI devices.

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

The Effect of Nitrogen on the Energy Distribution of Hole Traps Generated under Negative Bias Temperature Stress

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

The Energy Distribution of NBTI-induced Hole Traps in the Si Band Gap in PNO Pmosfets

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Difference Analysis Method for Negative Bias Temperature Instability Lifetime Prediction in Deeply Scaled Pmosfets