Abstract:It is widely recognized that recovery during measurement delay seriously misleads the BTI phenomena. We have developed a modified Charge Pumping (MCP) method to measure the interface trap generation under stress with negligible recovery during measurement delay. The method simply extends the inversion level Vinv of the CP pulse to the stress voltage and keeps the duty cycle of Vinv as large as possible, therefore the stress is almost "on" during measurement. For the first time, we developed a diagram representation of CP process and used to the physical analysis for the contribution and exclusion of slow oxide charge contribution in the CP current of this MCP method. Using this MCP method and the fast pulsed Id-Vg method (FPM) we developed in the past, we systematically investigate and compare the NBTI degradation of p-MOSFETs with thermal (TNO) and plasma (PNO) nitrided SiON gate dielectrics with the same nitrogen surface concentration. We also systematically measure the interface trap degradations in four configurations of NBTI and PBTI stresses for both n-MOSFETs and p-MOSFETs. The following results are achieved: (1) The oxide charge induced degradation in TNO SiON devices is several times larger than those in PNO devices under the same stress condition, due to the larger charge moment in the gate dielectrics of the TNO devices. (2)

The Energy Distribution of NBTI-induced Hole Traps in the Si Band Gap in PNO Pmosfets

The Effect of Nitrogen on the Energy Distribution of Hole Traps Generated under Negative Bias Temperature Stress

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Negative Bias Temperature Instability of HfN/HfO2 Gated P-Mosfets

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

New Insights of Bti Degradation in Mosfets with Sion Gate Dielectrics

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise