Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

The Energy Distribution of NBTI-induced Hole Traps in the Si Band Gap in PNO Pmosfets

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

The Effect of Nitrogen on the Energy Distribution of Hole Traps Generated under Negative Bias Temperature Stress

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

New Insights of Bti Degradation in Mosfets with Sion Gate Dielectrics

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

Ultrathin Oxynitride P-Mosfet Recovery Characteristics under NBTI Stress

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets